ROHM’s New Schottky Barrier Diodes Achieve Class-Leading Reverse Recovery Time with 100V Breakdown Voltage by Adopting a Trench MOS Structure that Significantly Improves VF-IR Trade-Off February 15, 2024 GlobeNewswire Source: Automotive Share on Facebook Share Share on TwitterTweet Share on Google Plus Share Share on Pinterest Share Share on LinkedIn Share Share on Digg Share